The excellent improvement in the frequency response of Si-CMOS devices has aggravated their use in the millimeter-wave regime such as high capacity wireless local area network, short range high data rate wireless personal area networks, and collision avoidance radar for automobiles. As a result of this development, the CMOS is a strong candidate for the RF wireless communications in this frequency regime of the specrum.įor the Multiple-Input, Multiple Output systems, it is essential to design a new RF switch that is capable of operating with multiple antennas and frequencies as well as minimizing signal distortion and power consumption. The aggressive scaling of metal-oxide-semiconductor field effect transistors (MOSFET) has led to the fabrication of high performance MOSFETs with a cut-off frequency (f T) of more than 150 GHz. A continuous scaling of CMOS technology has a better performance of both frequency and noise, where it is becoming a rigorous part for RF applications in the GHz frequency regime of the spectrum. For multiple operating frequencies, high signal distortions are easily observed, which results in an unrecognizable information signal at the receiver end which would be measured by using the curve of capacitance and voltage with VEE Pro software. In the radio transceiver the switches, traditional n-MOS switch has better performance compare to PIN diodes (use of PIN diodes consumes more power), but only for a single operating frequency. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless telecommunication systems. Keywords: 45-nm Technology, Capacitance of Double-Gate MOSFET, DG MOSFET, DP4T Switch, Radio Frequency, RF Switch, Resistance of Double-Gate MOSFET, VLSI 1Electronics and Communication Engineering Department, Jaypee University of Information Technology, Solan, India 2VLSIĭesign Group, Central Electronics Engineering Research Institute (CEERI), Pilani, India.Įmail: September 7 th, 2010 revised September 13 th, 2010 accepted September 19 th, 2010.
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